document number: 88382 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 186 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount par ? transient voltage suppressors high temperature stability an d high reliability conditions sm5s10 thru sm5s36a vishay general semiconductor features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 175 c capability suitable for high reliability and automotive requirement ? available in uni-directional polarity only ? low leakage current ? low forward voltage drop ? high surge capability ? meets iso7637-2 surge specification (varied by test condition) ? meets msl level 1, per j-std-020, lf maximum peak of 245 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. mechanical data case: do-218ab molding compound meets ul 94 v-0 flammabi lity rating base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: heatsink is anode note (1) non-repetitive current pulse at t a = 25 c primary characteristics v wm 10 v to 36 v p ppm (10 x 1000 s) 3600 w p ppm (10 x 10 000 s) 2800 w p d 5 w i fsm 500 a t j max. 175 c do-218ab maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse powe r dissipation with 10/1000 s waveform p ppm 3600 w with 10/10 000 s waveform 2800 power dissipation on in finite heatsink at t c = 25 c (fig. 1) p d 5.0 w peak pulse current with 10/1000 s waveform i ppm (1) see next table a peak forward surge current 8. 3 ms single ha lf sine-wave i fsm 500 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88382 187 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sm5s10 thru sm5s36a vishay general semiconductor note ? for all types maximum v f = 2.0 v at i f = 100 a measured on 8.3 ms single half sine-wave or eq uivalent square wave, duty cycle = 4 pulses per minute maximum electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) maximum reverse leakage at v wm t j = 175 c i d (a) max. peak pulse current at 10/1000 s waveform (a) maximum clamping voltage at i ppm v c (v) min. max. sm5s10 11.1 13.6 5.0 10.0 15 250 191 18.8 sm5s10a 11.1 12.3 5.0 10.0 15 250 212 17.0 sm5s11 12.2 14.9 5.0 11.0 10 150 179 20.1 sm5s11a 12.2 13.5 5.0 11.0 10 150 198 18.2 sm5s12 13.3 16.3 5.0 12.0 10 150 164 22.0 sm5s12a 13.3 14.7 5.0 12.0 10 150 181 19.9 sm5s13 14.4 17.6 5.0 13.0 10 150 151 23.8 sm5s13a 14.4 15.9 5.0 13.0 10 150 167 21.5 sm5s14 15.6 19.1 5.0 14.0 10 150 140 25.8 sm5s14a 15.6 17.2 5.0 14.0 10 150 155 23.2 sm5s15 16.7 20.4 5.0 15.0 10 150 134 26.9 sm5s15a 16.7 18.5 5.0 15.0 10 150 148 24.4 sm5s16 17.8 21.8 5.0 16.0 10 150 125 28.8 sm5s16a 17.8 19.7 5.0 16.0 10 150 138 26.0 sm5s17 18.9 23.1 5.0 17.0 10 150 118 30.5 sm5s17a 18.9 20.9 5.0 17.0 10 150 130 27.6 sm5s18 20.0 24.4 5.0 18.0 10 150 112 32.2 sm5s18a 20.0 22.1 5.0 18.0 10 150 123 29.2 sm5s20 22.2 27.1 5.0 20.0 10 150 101 35.8 sm5s20a 22.2 24.5 5.0 20.0 10 150 111 32.4 sm5s22 24.4 29.8 5.0 22.0 10 150 91 39.4 sm5s22a 24.4 26.9 5.0 22.0 10 150 101 35.5 sm5s24 26.7 32.6 5.0 24.0 10 150 84 43.0 sm5s24a 26.7 29.5 5.0 24.0 10 150 93 38.9 sm5s26 28.9 35.3 5.0 26.0 10 150 77 46.6 sm5s26a 28.9 31.9 5.0 26.0 10 150 86 42.1 sm5s28 31.1 38.0 5.0 28.0 10 150 72 50.1 sm5s28a 31.1 34.4 5.0 28.0 10 150 79 45.4 sm5s30 33.3 40.7 5.0 30.0 10 150 67 53.5 sm5s30a 33.3 36.8 5.0 30.0 10 150 74 48.4 sm5s33 36.7 44.9 5.0 33.0 10 150 61 59.0 sm5s33a 36.7 40.6 5.0 33.0 10 150 68 53.3 sm5s36 40.0 48.9 5.0 36.0 10 150 56 64.3 sm5s36a 40.0 44.2 5.0 36.0 10 150 62 58.1
document number: 88382 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 188 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sm5s10 thru sm5s36a vishay general semiconductor note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - power derating curve fig. 2 - load dump power characteristics (10 ms exponential waveform) fig. 3 - pulse waveform fig. 4 - reverse power capability thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to case r ? jc 1.0 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode sm5s10ahe3/2d (1) 2.505 2d 750 13" diameter plasti c tape and reel, anode towards the sprocket hole 0 2.0 4.0 6.0 8.0 0 50 100 150 200 ca s e temperature (c) power di ss ip ation (w ) 0 1000 500 1500 2000 2500 3000 25 50 75 100 125 150 175 load dump power (w) ca s e temperature (c) 0 50 100 150 0 10 20 30 40 input peak pul s e current (%) t - time (m s ) t d t r = 10 s peak value i ppm half value - i ppm i pp 2 t j = 25 c pul s e width (t d ) i s dened a s the point where the peak current decay s to 50 % of i ppm rever s e s urge power (w) 1000 10 100 10 000 pul s e width (m s ) - ? i pp exponential waveform
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88382 189 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sm5s10 thru sm5s36a vishay general semiconductor fig. 5 - typical transient thermal impedance package outline dimensions in inches (millimeters) r jc 0.01 0.1 1 10 100 100 10 1 0.1 0.01 t - pul s e width ( s ) tran s ient thermal impedance (c/w) r ja do-218ab mountin g pad layout 0.413 (10.5) 0.374 (9.5) 0.091 (2.3) 0.067 (1.7) 0.116 (3.0) 0.093 (2.4) 0.150 (3.8) 0.126 (3.2) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.116 (3.0) 0.093 (2.4) 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.342 (8.7) 0.327 (8.3) 0.413 (10.5) 0.374 (9.5) 0.028 (0.7) 0.020 (0.5) 0.138 (3.5) 0.098 (2.5) lead 1 0.098 (2.5) 0.059 (1.5) lead 2/metal heat s ink 0.197 (5.0) 0.185 (4.7) 0.016 (0.4) min.
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